X-RAY-DIFFRACTION STUDIES OF ANNEALED CZOCHRALSKI-GROWN SILICON .2. TRIPLE-CRYSTAL DIFFRACTOMETRY

被引：1

作者：

ZAUMSEIL, P

JOKSCH, S

ZULEHNER, W

机构：

[1] INST HALBLEITERPHYS,O-1200 FRANKFURT,GERMANY

[2] DESY,HAMBURGER SYNCHROTRONSTRAHLUNGSLABOR,W-2000 HAMBURG 52,GERMANY

[3] WACKER CHEMITRON GMBH,O-8263 BURGHAUSEN,GERMANY

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1993年 / 26卷

关键词：

D O I：

10.1107/S002188989201001X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper reports a series of X-ray triple-crystal diffractometry (TCD) measurements performed on annealed Czochralski-grown silicon (ACS) single crystals to investigate in more detail the reasons for the observed broadening of double-crystal diffractometer rocking curves described in the previous paper [Joksch, Zaumseil & Zulehner (1993). J. Appl. Cryst. 26, 185-191]. It is shown that diffuse scattering by structural defects created during the high-temperature heat treatment is responsible for the changes in the reflection properties. With TCD, the dominant defects are identified as stacking faults on (111) planes.

引用

页码：192 / 197

页数：6

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