INDIUM-TIN OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：141

作者：

MARUYAMA, T

FUKUI, K

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Sakyo-ku

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent conductive indium-tin oxide thin films were prepared by an atmospheric-pressure chemical vapor deposition method. The source materials were indium acetylacetonate and tin (II) acetylacetonate which are nontoxic and easy to handle. The polycrystalline films were obtained at a reaction temperature in the range of 350-500-degrees-C. For the 215-nm-thick film deposited at 450-degrees-C, the resistivity was 1.8 X 10(-4) OMEGA cm, and the transmittance was more than 90% in the wave number range of above 400 nm. The atomic ratio Sn/In of the film was 0.031. The effects of tin doping on the structure and characteristics of the film were discussed on the basis of the carrier concentration and mobility which were measured by using the Hall effect.

引用

页码：3848 / 3851

页数：4

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