INTERSUBBAND AND INTRASUBBAND RELAXATION OF HOT CARRIERS IN QUANTUM-WELLS PROBED BY TIME-RESOLVED RAMAN-SPECTROSCOPY

被引：11

作者：

TATHAM, MC

RYAN, JF

机构：

[1] Clarendon Lab., Oxford Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantum wells and has revealed new information on the physics of the electron-phonon interaction. Measurements of inter-subband relaxation have for the first time revealed sub-picosecond scattering rates. Also, it has been demonstrated that intra-subband relaxation in narrow quantum wells is dominated by the emission of interface modes. Furthermore, the lifetime of LO phonons in quantum wells is found to be smaller than in bulk GaAs.

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页码：B102 / B108

页数：7

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