PREPARATION, ELECTRICAL-PROPERTIES AND ANNEALING OF ZNGEAS2

被引：9

作者：

MERCEY, B

CHIPPAUX, D

VIZOT, J

DESCHANVRES, A

机构：

[1] ISMRA-Univ, Lab de Cristallographie,, Chimie et Physique des Solides,, Caen, Fr, ISMRA-Univ, Lab de Cristallographie, Chimie et Physique des Solides, Caen, Fr

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1986年 / 47卷 / 01期

关键词：

D O I：

10.1016/0022-3697(86)90174-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：37 / 43

页数：7

共 7 条

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[2] ELECTRICAL-PROPERTIES OF H+-IRRADIATED P-ZNGEAS2 [J].

BRUDNYI, VN ;

POTAPOV, AI ;

RUD, YV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (01) :K73-K76

[3]

CONSTANTINESCU C, 1966, REV ROUM PHYS, V11, P607

[4]

GORYUNOVA NA, 1965, ZH PRIKL KHIM, V38, P771

[5] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].

KAUFMANN, U ;

SCHNEIDER, J ;

RAUBER, A .

APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313

[6] PREPARATION AND PROPERTIES OF ZNGEAS2 [J].

SCHOLL, FW ;

CORY, ES .

MATERIALS RESEARCH BULLETIN, 1974, 9 (11) :1511-1515

[7]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

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