MEASUREMENT OF NARROW SI DOPANT DISTRIBUTIONS IN GAAS BY SIMS

被引:57
作者
CLEGG, JB
BEALL, RB
机构
关键词
D O I
10.1002/sia.740140607
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:307 / 314
页数:8
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共 24 条
[1]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[2]  
ARMOUR DG, 1988, 6 P SIMS, P399
[3]   MIGRATION OF SI IN DELTA-DOPED GAAS [J].
BEALL, RB ;
CLEGG, JB ;
HARRIS, JJ .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :612-615
[4]  
BENNINGHOVEN A, 1987, SECONDARY ION MASS S, P783
[5]  
BENNINGHOVEN A, 1987, SECONDARY ION MASS S, P1121
[6]  
Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304
[7]   DEPTH PROFILING OF SHALLOW ARSENIC IMPLANTS IN SILICON USING SIMS [J].
CLEGG, JB .
SURFACE AND INTERFACE ANALYSIS, 1987, 10 (07) :332-337
[8]  
Crank J., 1975, MATH DIFFUSION, P11
[9]   SIMS ANALYSIS, UNDER CESIUM BOMBARDMENT, OF SI IN GAAS (AL, GA)AS SUPERLATTICES - DETECTION LIMIT AND DEPTH RESOLUTION [J].
GAUNEAU, M ;
CHAPLAIN, R ;
REGRENY, A ;
SALVI, M ;
GUILLEMOT, C ;
AZOULAY, R ;
DUHAMEL, N .
SURFACE AND INTERFACE ANALYSIS, 1988, 11 (11) :545-552
[10]  
GRATTEPAIN C, 1988, 3RD INT C SHALL IMP