FORMATION OF LOW DEFECT DENSITY SIOX FILMS FOR JOSEPHSON INTEGRATED-CIRCUITS

被引：21

作者：

SHIBAYAMA, H

HASUO, S

YAMAOKA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：429 / 430

页数：2

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