GA ADSORPTION ON GAAS(001) AND AL-GA-GAAS SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：14
作者：
SVENSSON, SP
KANSKI, J
ANDERSSON, TG
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.30.6033
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6033 / 6038
页数：6
相关论文
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