OUTPUT-RESISTANCE PROPERTIES OF GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR IN SATURATION

被引：3

作者：

ROSSEL, P ^{[1
]}

CABOT, JJ ^{[1
]}

机构：

[1] CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 07期

关键词：

D O I：

10.1049/el:19750115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：150 / 152

页数：3

共 11 条

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HARROP, P .

SOLID-STATE ELECTRONICS, 1972, 15 (09) :1031-&

[4]

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[5]

HOWER PL, 1973, IEEE T ELECTRON DEVI, VED20, P213

[6]

HOWER PL, 1968, P S GAAS I PHYSICS P, P187

[7] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

LEHOVEC, K ;

ZULEEG, R .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[8]

MO DL, 1970, IEEE T, VED17, P577

[9] DETAILED ANALYSIS OF METAL-SEMICONDUCTOR CONTACT [J].

PELLEGRINI, B .

SOLID-STATE ELECTRONICS, 1974, 17 (03) :217-237

[10] (MODEL OF A METAL-OXIDE-SILICON TRANSISTOR OPERATING IN SATURATION REGION) [J].

ROSSEL, P ;

MARTINOT, H .

ELECTRONICS LETTERS, 1973, 9 (18) :414-416

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