EFFECTS OF INTERVALLEY SCATTERING ON NOISE IN GAAS AND INP FIELD-EFFECT TRANSISTORS

被引：12
作者：
FREY, J [1 ]
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 12期
关键词：
D O I：
10.1109/T-ED.1976.18653
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1298 / 1303
页数：6
相关论文
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