INTERFACE FORMATION AND GROWTH OF INSB ON SI(100)

被引：52

作者：

FRANKLIN, GE

RICH, DH

HONG, HW

MILLER, T

CHIANG, TC

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4-degrees off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410-degrees-C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.

引用

收藏

页码：3426 / 3434

页数：9

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