SPECTRAL LINEWIDTH OF A GRECC LASER WITH ADDED EXTERNAL CAVITY

被引:2
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LIOU, KY
BURRUS, CA
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D O I
10.1049/el:19850249
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:353 / 354
页数:2
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[1]   SPECTRAL CHARACTERISTICS OF SEMICONDUCTOR-LASERS WITH OPTICAL FEEDBACK [J].
GOLDBERG, L ;
TAYLOR, HF ;
DANDRIDGE, A ;
WELLER, JF ;
MILES, RO .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) :555-564
[2]   SIMPLE FORMULA GIVING SPECTRUM-NARROWING RATIO OF SEMICONDUCTOR-LASER OUTPUT OBTAINED BY OPTICAL FEEDBACK [J].
KIKUCHI, K ;
OKOSHI, T .
ELECTRONICS LETTERS, 1982, 18 (01) :10-12
[3]   MEASURED SPECTRAL LINEWIDTH OF SINGLE-FREQUENCY 1.3-MU-M AND 1.5-MU-M INJECTION-LASERS [J].
LEE, TP ;
BURRUS, CA ;
LIOU, KY ;
OLSSON, NA ;
LOGAN, RA ;
WILT, DP .
ELECTRONICS LETTERS, 1984, 20 (24) :1011-1012
[5]   SINGLE-LONGITUDINAL-MODE STABILIZED GRADED-INDEX-ROD EXTERNAL COUPLED-CAVITY LASER [J].
LIOU, KY ;
BURRUS, CA ;
LINKE, RA ;
KAMINOW, IP ;
GRANLUND, SW ;
SWAN, CB ;
BESOMI, P .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :729-731
[6]   NOVEL METHOD FOR HIGH-RESOLUTION MEASUREMENT OF LASER OUTPUT SPECTRUM [J].
OKOSHI, T ;
KIKUCHI, K ;
NAKAYAMA, A .
ELECTRONICS LETTERS, 1980, 16 (16) :630-631
[7]   CHANNELLED-SUBSTRATE BURIED HETEROSTRUCTURE INGAASP INP LASERS WITH VAPOR-PHASE EPITAXIAL BASE STRUCTURE AND LIQUID-PHASE EPITAXIAL REGROWTH [J].
WILT, DP ;
KARLICEK, RF ;
STREGE, KE ;
DAUTREMONTSMITH, WC ;
DUTTA, NK ;
FLYNN, EJ ;
JOHNSTON, WD ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (03) :710-712