THE EFFECTS OF PLASMA AND ION-BEAM PROCESSING ON THE PROPERTIES OF N-GAAS SCHOTTKY DIODES

被引：11
|
作者：
SMITH, PJ
ALLAN, DA
机构：
来源：
VACUUM | 1984年 / 34卷 / 1-2期
关键词：
D O I：
10.1016/0042-207X(84)90129-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：209 / 213
页数：5
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