SEMICONDUCTING BEHAVIOR OF SUBSTITUTED TUNGSTEN DISELENIDE AND ITS ANALOGUES

被引：73

作者：

HICKS, WT

机构：

来源：

关键词：

D O I：

10.1149/1.2426317

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1058 / 1065

页数：8

共 10 条

[1] THERMAL CONDUCTIVITY OF GE-SI ALLOYS AT HIGH TEMPERATURES [J].

ABELES, B ;

BEERS, DS ;

DISMUKES, JP ;

CODY, GD .

PHYSICAL REVIEW, 1962, 125 (01) :44-&

BRIXNER, LH .

BRIXNER, LH .

JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1962, 24 (MAR) :257-263

[4] OPTICAL PROPERTIES OF SINGLE CRYSTALS OF WSE2 AND MOTE2 [J].

FRINDT, RF .

[5]

HANSEN M, 1958, CONSTITUTION BINARY, P1192

[6]

Ioffe AF, 1957, SEMICONDUCTOR THERMO, P29

[7]

JOHNSON VA, 1956, PROGR SEMICONDUCTORS, V1, P65

[8]

KLUG HP, 1954, XRAY DIFFRACTION PRO, P485

[9]

McDougall J., 1938, PHILOS T R SOC A, V237, P67, DOI [10.1098/rsta.1938.0004, DOI 10.1098/RSTA.1938.0004]

[10]

VALDSAAR H, COMMUNICATION