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- [21] LOW-TEMPERATURE EPITAXIAL-GROWTH OF THIN METAL-FILMSPHYSICAL REVIEW B, 1990, 41 (08): : 5410 - 5413EVANS, JWSANDERS, DETHIEL, PADEPRISTO, AE
- [22] EVALUATION OF BINARY AND TERNARY MELTS FOR THE LOW-TEMPERATURE LIQUID-PHASE EPITAXIAL-GROWTH OF SILICONJOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (08) : 635 - 641LEE, SHGREEN, MA
- [23] EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTHJOURNAL OF APPLIED PHYSICS, 1995, 78 (07) : 4710 - 4714TSENG, HCCHANG, CYPAN, FMCHEN, LP
- [24] BORON, ARSENIC, AND PHOSPHORUS DOPANT INCORPORATION DURING LOW-TEMPERATURE LOW-PRESSURE SILICON EPITAXIAL-GROWTHJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C479 - C479BORLAND, JTHOMPSON, TTAGLE, VBENZING, W
- [25] INSITU TEMPERATURE-MEASUREMENT BY INFRARED-ABSORPTION FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF HOMO-EPITAXIAL AND HETEROEPITAXIAL LAYERS ON SILICONJOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) : 1051 - 1054STURM, JCSCHWARTZ, PVGARONE, PM
- [26] LOW-TEMPERATURE EPITAXIAL-GROWTH OF CADMIUM TELLURIDE FROM MERCURY SOLVENTJOURNAL OF CRYSTAL GROWTH, 1987, 83 (01) : 127 - 136SANGHA, SPSMEDLAND, JDBERRY, JARINN, LM
- [27] TRISDIMETHYLAMINOANTIMONY - A NEW SB SOURCE FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSBJOURNAL OF CRYSTAL GROWTH, 1994, 143 (1-2) : 15 - 21SHIN, JVERMA, ASTRINGFELLOW, GBGEDRIDGE, RW
- [28] ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATESAPPLIED PHYSICS LETTERS, 1988, 53 (19) : 1823 - 1825NARAYAN, JSRIVATSA, ARPETERS, MYOKOTA, SRAVI, KV
- [29] SILICON EPITAXIAL-GROWTHJOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +NISHIZAWA, JITERASAKI, TSHIMBO, M
- [30] LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON ON-AXIS (100) SI USING IONIZED SOURCE BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2866 - 2869YUN, SJYOO, MCKIM, K