THE S-PASSIVATION OF GE(100)-(1X1)

被引：80

作者：

ANDERSON, GW ^{[1
]}

HANF, MC ^{[1
]}

NORTON, PR ^{[1
]}

LU, ZH ^{[1
]}

GRAHAM, MJ ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The treatment of Ge(100) in an aqueous ammonium sulfide solution is investigated by means of xâray photoelectron spectroscopy, Auger electron spectroscopy, lowâenergy electron diffraction, scanning electron microscopy, and atomic force microscopy. This treatment is shown to produce an Sâpassivated Ge(100)â(1Ã1) surface, where the S atoms appear to be bridge bonded to the Ge atoms. Desorption of the S is observed to occur between 460 and 750 K and results in a Ge(100)â(1Ã1) surface with a surface morphology similar to that of the initial sample. © 1995, American Institute of Physics. All rights reserved.

引用

页码：1123 / 1125

页数：3

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