SUB-MU-M, PLANARIZED, NB-ALOX-NB JOSEPHSON PROCESS FOR 125-MM WAFERS DEVELOPED IN PARTNERSHIP WITH SI TECHNOLOGY

被引：90

作者：

KETCHEN, MB ^{[1
]}

PEARSON, D ^{[1
]}

KLEINSASSER, AW ^{[1
]}

HU, CK ^{[1
]}

SMYTH, M ^{[1
]}

LOGAN, J ^{[1
]}

STAWIASZ, K ^{[1
]}

BARAN, E ^{[1
]}

JASO, M ^{[1
]}

ROSS, T ^{[1
]}

PETRILLO, K ^{[1
]}

MANNY, M ^{[1
]}

BASAVAIAH, S ^{[1
]}

BRODSKY, S ^{[1
]}

KAPLAN, SB ^{[1
]}

GALLAGHER, WJ ^{[1
]}

BHUSHAN, M ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 20期

关键词：

D O I：

10.1063/1.106405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a new planarized all-refractory technology for low T(c) superconductivity (PARTS). With the exception of the Nb-AlOx-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5-100-mu-m2. Junction quality is excellent with the figure of merit V(m) typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.

引用

页码：2609 / 2611

页数：3

共 16 条

[1]

AMBEGAOKAR V, 1963, PHYS REV LETT, V11, P104, DOI 10.1103/PhysRevLett.11.104

[2] TUNNELING BETWEEN SUPERCONDUCTORS [J].