DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON

被引：48

作者：

CEMBALI, F

SERVIDORI, M

ZANI, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 09期

关键词：

D O I：

10.1016/0038-1101(85)90087-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：933 / &

共 7 条

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[4]

Petrashen P. V., 1975, Soviet Physics - Solid State, V16, P1417

[5] TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF LOW-TEMPERATURE ION-IMPLANTED (100) SILICON [J].

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VECCHI, I .

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[6] RESIDUAL LATTICE DISORDER IN SELF-IMPLANTED SILICON AFTER PULSED LASER IRRADIATION [J].

SERVIDORI, M ;

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GARULLI, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02) :691-701

[7] THEORIE DYNAMIQUE DE LA DIFFRACTION DES RAYONS X PAR LES CRISTAUX DEFORMES [J].

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