ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY

被引：85
作者：
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期
关键词：
D O I：
10.1063/1.95739
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1148 / 1150
页数：3
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