THE NATURE OF THE CHARGED SELF-INTERSTITIAL IN SILICON

被引：16
作者：
KHOO, GS
ONG, CK
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 31期
关键词：
D O I：
10.1088/0022-3719/20/31/008
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：5037 / 5043
页数：7
相关论文
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