THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AT TANTALUM CENTERS IN SILICON

被引：4

作者：

MIYATA, K

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 07期

关键词：

D O I：

10.1016/0038-1101(76)90059-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：611 / 613

页数：3

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