ORDERED OVERLAYERS OF C60 ON GAAS(110) STUDIED WITH SCANNING TUNNELING MICROSCOPY

被引：219
作者：
LI, YZ
PATRIN, JC
CHANDER, M
WEAVER, JH
CHIBANTE, LPF
SMALLEY, RE
机构：
[1] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251
[2] RICE UNIV,DEPT CHEM,HOUSTON,TX 77251
[3] RICE UNIV,DEPT PHYS,HOUSTON,TX 77251
来源：
SCIENCE | 1991年 / 252卷 / 5005期
关键词：
D O I：
10.1126/science.252.5005.547
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Studies of C60 overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C60 monolayer.
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页码：547 / 548
页数：2
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