ARTIFICIALLY STRUCTURED THIN-FILM MATERIALS AND INTERFACES

被引：30
作者：
NARAYANAMURTI, V
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
SCIENCE | 1987年 / 235卷 / 4792期
关键词：
D O I：
10.1126/science.235.4792.1023
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
28
引用
收藏
页码：1023 / 1028
页数：6
相关论文
共 32 条
[1]   STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].
BEAN, JC .
SCIENCE, 1985, 230 (4722) :127-131
[2]   TUNNELING IMAGES OF THE 5X5 SURFACE RECONSTRUCTION ON GE-SI(111) [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW B, 1985, 32 (12) :8455-8457
[3]   TUNNELING IMAGES OF GERMANIUM SURFACE RECONSTRUCTIONS AND PHASE BOUNDARIES [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 54 (25) :2678-2680
[4]   GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J].
BEVK, J ;
MANNAERTS, JP ;
FELDMAN, LC ;
DAVIDSON, BA ;
OURMAZD, A .
APPLIED PHYSICS LETTERS, 1986, 49 (05) :286-288
[5]   7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123
[6]   QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].
CAPASSO, F ;
SEN, S ;
GOSSARD, AC ;
HUTCHINSON, AL ;
ENGLISH, JH .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576
[7]   BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J].
CAPASSO, F .
SCIENCE, 1987, 235 (4785) :172-176
[8]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[9]  
Chang L.L., 1980, MOL BEAM EPITAXY, P15
[10]   GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].
CHO, AY .
THIN SOLID FILMS, 1983, 100 (04) :291-317
1234