BORON AND INDIUM ION-IMPLANTED JUNCTIONS IN HGCDTE GROWN ON CDTE AND CDTE/AL2O3

被引：29
作者：
BUBULAC, LO
LO, DS
TENNANT, WE
EDWALL, DD
ROBINSON, JC
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期
关键词：
D O I：
10.1116/1.574049
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：2169 / 2173
页数：5
相关论文
共 19 条
[1]   STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE [J].
BAHIR, G ;
KALISH, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3129-3140
[2]   DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE [J].
BUBULAC, LO .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :976-978
[3]   SOME ASPECTS OF LI BEHAVIOR IN ION-IMPLANTED HGCDTE [J].
BUBULAC, LO ;
TENNANT, WE ;
RIEDEL, RA ;
BAJAJ, J ;
EDWALL, DD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1646-1650
[4]   BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE [J].
BUBULAC, LO ;
TENNANT, WE ;
RIEDEL, RA ;
MAGEE, TJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :251-254
[5]   ION-IMPLANTATION STUDY OF HGCDTE [J].
BUBULAC, LO ;
TENNANT, WE ;
SHIN, SH ;
WANG, CC ;
LANIR, M ;
GERTNER, ER ;
MARSHALL, ED .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :495-500
[6]  
BUBULAC LO, 1975, J CRYST GROWTH, V72, P478
[7]   THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE [J].
CAPPER, P .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :280-299
[8]   INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE [J].
DESTEFANIS, GL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :171-175
[9]   ION-IMPLANTATION IN HG1-XCDXTE [J].
DESTEFANIS, GL .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :567-580
[10]   DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].
JOHNSON, ES ;
SCHMIT, JL .
JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) :25-38
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