ANALYSIS OF THE EFFECTS OF ANNEALING ON RESISTIVITY OF CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILMS

被引：36
作者：
SHIOYA, Y
MAEDA, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期
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D O I：
10.1063/1.337647
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：327 / 333
页数：7
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