THE GROWTH AND ATOMIC-STRUCTURE OF THE SI(111)-INDIUM INTERFACE STUDIED BY SURFACE X-RAY-DIFFRACTION

被引：25

作者：

FINNEY, MS

NORRIS, C

HOWES, PB

JAMES, MA

MACDONALD, JE

JOHNSON, AD

VLIEG, E

机构：

[1] UNIV WALES COLL CARDIFF,DEPT PHYS,CARDIFF CF1 3NS,S GLAM,WALES

[2] DRA ELECTR DIV,GREAT MALVERN,ENGLAND

[3] FOM,AMSTERDAM,NETHERLANDS

来源：

PHYSICA B | 1994年 / 198卷 / 1-3期

关键词：

D O I：

10.1016/0921-4526(94)90171-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Surface X-ray diffraction has been used to monitor the growth of indium on silicon (1 1 1) as a function of temperature and to determine the atomic structure of the Si(1 1 1) 4 x 1-In reconstruction. The results indicate there are four indium atoms per 4 x 1 unit mesh with an average near neighbour separation which is reduced from that of the indium bulk.

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页码：246 / 248

页数：3

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