EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES

被引：11
作者：
BRYS, C
VERMAERKE, F
DEMEESTER, P
VANDAELE, P
RAKENNUS, K
SALOKATVE, A
UUSIMAA, P
PESSA, M
BRADLEY, AL
DORAN, JP
OGORMAN, J
HEGARTY, J
机构：
[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE,FINLAND
[2] TRINITY COLL DUBLIN,DEPT PHYS,DUBLIN 2,IRELAND
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期
关键词：
D O I：
10.1063/1.113580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The epitaxial lift-off technique is applied to II-VI based structures. Epilayers of 255 nm thickness containing quantum wells are lifted off their substrates and redeposited onto polyimide coated GaAs. The technique has also been applied to II-VI samples onto which dielectric films had been deposited. Photoluminescence measurements show that the material quality has not been degraded during the processing. The success of this technique with II-VI's opens up many possibilities for the integration of these materials with metals and dielectrics in vertical structure devices.© 1995 American Institute of Physics.
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页码：1086 / 1088
页数：3
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