EFFECT OF POST-OXIDATION ANNEAL ON ULTRATHIN SIO2 GATE OXIDES

被引：22

作者：

ARIENZO, M

DORI, L

SZABO, TN

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 16期

关键词：

D O I：

10.1063/1.97465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1040 / 1042

页数：3

共 21 条

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