A MODEL OF CHARGE TRANSPORT IN THERMAL SIO2 IMPLANTED WITH SI

被引:32
作者
KALNITSKY, A [1 ]
BOOTHROYD, AR [1 ]
ELLUL, JP [1 ]
机构
[1] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA
关键词
30;
D O I
10.1016/0038-1101(90)90071-L
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A model of charge transport and trapping in therml SiO2 implanted with Si is presented. The model gives a comprehensive representation of the physical mechanisms associated with Si implant-induced trapping sites in SiO2 and describes most of the effects experimentally observed in this material. © 1990.
引用
收藏
页码:893 / 905
页数:13
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