A MODEL OF CHARGE TRANSPORT IN THERMAL SIO2 IMPLANTED WITH SI

被引：32

作者：

KALNITSKY, A ^{[1
]}

BOOTHROYD, AR ^{[1
]}

ELLUL, JP ^{[1
]}

机构：

[1] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 07期

关键词：

30;

D O I：

10.1016/0038-1101(90)90071-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model of charge transport and trapping in therml SiO2 implanted with Si is presented. The model gives a comprehensive representation of the physical mechanisms associated with Si implant-induced trapping sites in SiO2 and describes most of the effects experimentally observed in this material. © 1990.

引用

页码：893 / 905

页数：13

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