NONDESTRUCTIVE DEPTH PROFILING BY SPECTROSCOPIC ELLIPSOMETRY

被引：114

作者：

VEDAM, K

MCMARR, PJ

NARAYAN, J

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：339 / 341

页数：3

共 15 条

[1] OPTIMIZING PRECISION OF ROTATING-ANALYZER ELLIPSOMETERS [J].

ASPNES, DE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (05) :639-646

[2] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318

[3] HIGH PRECISION SCANNING ELLIPSOMETER [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED OPTICS, 1975, 14 (01) :220-228

[4] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

THEETEN, JB .

PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302

[5] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[6] OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].

ASPNES, DE ;

THEETEN, JB .

PHYSICAL REVIEW LETTERS, 1979, 43 (14) :1046-1050

[7]

ASPNES DE, 1979, J VAC SCI TECHNOL, V16, P1983

[8]

ASPNES DE, 1980, J ELECTROCHEM SOC, V127, P378

[9]

ASPNES DE, 1985, NBS SPECIAL PUB, V697, P5

[10]

ASPNES DE, 1983, SPIE, V452, P60

← 1 2 →