3-LEVEL METALLIZATION 3-PHASE CCD

被引：31

作者：

BERTRAM, WJ ^{[1
]}

MOHSEN, AM ^{[1
]}

MORRIS, FJ ^{[1
]}

SEALER, DA ^{[1
]}

SEQUIN, CH ^{[1
]}

TOMPSETT, MF ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 12期

关键词：

D O I：

10.1109/T-ED.1974.18052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：758 / 767

页数：10

共 24 条

[1] PERFORMANCE LIMITATIONS OF IGFET BUCKET-BRIGADE SHIFT REGISTER [J].

BERGLUND, CN ;

BOLL, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) :852-+

[2] CHARGE COUPLED SEMICONDUCTOR DEVICES [J].

BOYLE, WS ;

SMITH, GE .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :587-+

[3]

COLLINS DR, 1973, J ELECTROCHEM SO APR, P521

[4] SURFACE CHARGE TRANSPORT IN SILICON [J].

ENGELER, WE ;

TIEMANN, JJ ;

BAERTSCH, RD .

APPLIED PHYSICS LETTERS, 1970, 17 (11) :469-&

[5]

ENGELER WE, 1971, IEEE T ELECTRON DEVI, VED18, P1125

[6]

ESSER LJM, 1973, TECH DIGEST, P17

[7]

KAHNG D, 1972, Patent No. 3651349

[8] P-CHANNEL CHARGE-COUPLED DEVICES WITH RESISTIVE GATE STRUCTURE [J].

KIM, CK ;

SNOW, EH .

APPLIED PHYSICS LETTERS, 1972, 20 (12) :514-&

[9]

KOSONOCKY WF, 1971, IEEE J SOLID STATE C, VSC 6, P314

[10]

KRAMBECK RH, 1974, IEEE T ELECTRON DEVI, VED21, P70

← 1 2 3 →