SINGLE-TRANSVERSE-MODE INJECTION-LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR-BEAM EPITAXY

被引:39
作者
LEE, TP
CHO, AY
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.89009
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:164 / 166
页数:3
相关论文
共 17 条
[1]   OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS [J].
BLUM, JM ;
MCGRODDY, JC ;
MCMULLIN, PG ;
SHIH, KK ;
SMITH, AW ;
ZIEGLER, JF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :413-418
[2]   ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS [J].
BURNHAM, RD ;
SCIFRES, DR .
APPLIED PHYSICS LETTERS, 1975, 27 (09) :510-511
[3]   STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS [J].
BURNHAM, RD ;
SCIFRES, DR ;
TRAMONTANA, JC ;
ALIMONDA, AS .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :418-420
[4]   GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].
CHO, AY ;
BALLAMY, WC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785
[5]   FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&
[6]   OPTIMUM STRIP WIDTH FOR CONTINUOUS OPERATION OF GAAS JUNCTION LASERS [J].
DYMENT, JC ;
RIPPER, JE ;
ZACHOS, TH .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1802-+
[7]   PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].
DYMENT, JC ;
NORTH, JC ;
MILLER, BI ;
RIPPER, JE ;
DASARO, LA .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&
[8]   HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS [J].
DYMENT, JC .
APPLIED PHYSICS LETTERS, 1967, 10 (03) :84-&
[9]  
DYMENT JC, UNPUBLISHED
[10]   CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].
HAKKI, BW .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028