ELECTRICAL END-POINT DETECTION DURING ION-BEAM ETCHING OF THIN-FILMS AND MULTILAYERS

被引：5
|
作者：
MATTHES, A
SCHMIDL, F
BARHOLZ, KU
ELSCHNER, F
SCHNEIDEWIND, H
SEIDEL, P
机构：
[1] Inst. fur Festkorperphys., Friedrich-Schiller-Univ., Jena
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1995年 / 8卷 / 08期
关键词：
D O I：
10.1088/0953-2048/8/8/013
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose the in situ measurement of the sample resistance to control the end-point detection during ion beam etching (IBE). The technical requirements are presented. Models for the time dependence of the resistance during the IBE process are discussed and compared to the results of our measurements on samples with thin films and multilayers which are usual in high-T-c superconducting technology.
引用
收藏
页码：676 / 679
页数：4
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