BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+

被引：25

作者：

COMAS, J

PLEW, L

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] USN,WEAP SUPPORT CTR,CRANE,IN 47522

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF02652904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：209 / 221

页数：13

共 12 条

[1]

Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802

[2] SOME 2ND-PHASE STRUCTURES IN GALLIUM-ARSENIDE ANNEALED AFTER IMPLANTATION WITH ZINC [J].

BENSON, RB ;

LITTLEJOHN, MA ;

PAO, PS ;

SARIN, HK .

APPLIED PHYSICS LETTERS, 1975, 27 (02) :69-71

[3]

EIRUGDAVIES D, 1975, SOLID STATE ELECTRON, V18, P733

[4]

Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305

[5] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS [J].

HUNSPERGER, RG ;

HIRSCH, N .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :349-353

[6]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[7]

LYONS RP, 1975, B AM PHYS SOC, V20, P318

[8] DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J].

MANNING, I ;

MUELLER, GP .

COMPUTER PHYSICS COMMUNICATIONS, 1974, 7 (02) :85-94

[9] SECONDARY ION EMISSION FOR SURFACE AND IN-DEPTH ANALYSIS OF TANTALUM THIN-FILMS [J].

MORABITO, JM ;

LEWIS, RK .

ANALYTICAL CHEMISTRY, 1973, 45 (06) :869-880

[10]

POLTORATSKII EA, 1966, SOV PHYS-SOLID STATE, V8, P770

← 1 2 →