Microwave annealing effects on ZnO films deposited by atomic layer deposition

Zinc oxide thin films deposited on glass substrate at 150 degrees C by atomic layer deposition were annealed by the microwave method at temperatures below 500 degrees C. The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence. The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films. The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.