SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES

被引：93
作者：
CROWELL, CR
SHORE, HB
LABATE, EE
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 12期
关键词：
D O I：
10.1063/1.1713959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3843 / &
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