SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES

被引：93
作者：
CROWELL, CR
SHORE, HB
LABATE, EE
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 12期
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D O I：
10.1063/1.1713959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3843 / &
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共 34 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]  
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[3]   MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY [J].
ARCHER, RJ ;
GOBELI, GW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :343-&
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]   EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J].
BUCK, TM ;
MCKIM, FS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) :709-714
[6]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[7]   EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].
CROWELL, CR ;
SZE, SM ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&
[8]  
CROWELL CR, 1965, T METALL SOC AIME, V233, P478
[9]   ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].
CROWELL, CR ;
HOWARTH, LE ;
SPITZER, WG ;
LABATE, EE .
PHYSICAL REVIEW, 1962, 127 (06) :2006-&
[10]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
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