A PARAMETRIC STUDY OF THE ETCHING OF SILICON IN SF6 MICROWAVE MULTIPOLAR PLASMAS - INTERPRETATION OF ETCHING MECHANISMS

被引：63

作者：

PETIT, B

PELLETIER, J

机构：

[1] UNIV SCI & MED GRENOBLE, CNRS, UNITE 844, MEYLAN, FRANCE

[2] CTR NATL ETUD TELECOMMUN, F-38243 MEYLAN, FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：825 / 834

页数：10

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