A fully monolithic 0.18 mu m SiGe BiCMOS power amplifier design

被引：1
作者：
Chen Lei [1 ]
Ruan Ying [1 ]
Su Jie [1 ]
Zhang Shulin [1 ]
Shi Chunqi [1 ]
Lai Zongsheng [1 ]
机构：
[1] East China Normal Univ, Inst Microelectron Circuit & Syst, Shanghai 200062, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 05期
关键词：
SiGe; BiCMOS; power amplifier; monolithic; multi-mode;
D O I：
10.1088/1674-4926/32/5/055005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A fully monolithic power amplifier (PA) for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 mu m SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Analysis and Design of a 60 GHz Fully-Differential Frequency Doubler in 130 nm SiGe BiCMOS
    Riess, Vincent
    Testa, Paolo Valerio
    Carta, Corrado
    Ellinger, Frank
    2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [42] Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators
    Inac, Mesut
    Korndoerfer, Falk
    Gerfers, Friedel
    Malignaggi, Andrea
    2023 IEEE 23RD TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2023, : 58 - 61
  • [43] A High linearity SiGe BiCMOS Power Amplifier for 2.4GHz Wireless Communications
    Tian Liang
    Zhou Jin
    Huang Aibo
    Ruan Ying
    Chen Lei
    Lai Zongsheng
    2009 ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIMEASIA 2009), 2009, : 356 - 359
  • [44] Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip
    Yacoub, Hady
    Rausch, Marko
    Stoelmacker, Christoph
    Doerner, Ralf
    Hossain, Maruf
    Ostermay, Ina
    Moule, Taylor
    Wietstruck, Matthias
    Knigge, Steffen
    Krueger, Olaf
    Heinrich, Wolfgang
    2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 169 - 172
  • [45] A source degenerated LC quadrature VCO (SD-QVCO) using 0.18-μm SiGe BiCMOS
    Sanjeev Jain
    Sheng-Lyang Jang
    Jhin-Fang Huang
    Analog Integrated Circuits and Signal Processing, 2013, 76 : 161 - 166
  • [46] A DC to 25 GHz 6-bit digital attenuator based on 0.18 μm SiGe BiCMOS technology
    Hao, Dongning
    Zhang, Wei
    Liu, Xiubo
    Liu, Yanyan
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2021, 31 (08)
  • [47] A source degenerated LC quadrature VCO (SD-QVCO) using 0.18-μm SiGe BiCMOS
    Jain, Sanjeev
    Jang, Sheng-Lyang
    Huang, Jhin-Fang
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2013, 76 (02) : 161 - 166
  • [48] IMPEDANCE MATCHING WILKINSON POWER DIVIDERS IN 0.35 μm SiGe BiCMOS TECHNOLOGY
    Kaymaksut, Ercan
    Gurbuz, Yasar
    Tekin, Ibrahim
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (03) : 681 - 685
  • [49] A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner
    Li, Xingcun
    Chen, Wenhua
    Wu, Huibo
    Li, Shuyang
    Yi, Xiang
    Han, Ruonan
    Feng, Zhenghe
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57 (12) : 3567 - 3581
  • [50] CMOS 0.18-μm INTEGRATED POWER AMPLIFIER FOR UWB SYSTEMS
    Makarov, D. G.
    Krizhanovskii, V. V.
    Shu, Chang
    Krizhanovskii, V. G.
    2008 4TH INTERNATIONAL CONFERENCE ON ULTRAWIDEBAND AND ULTRASHORT IMPULSE SIGNALS, PROCEEDINGS, 2008, : 153 - +
12345