A fully monolithic 0.18 mu m SiGe BiCMOS power amplifier design

被引：1
作者：
Chen Lei [1 ]
Ruan Ying [1 ]
Su Jie [1 ]
Zhang Shulin [1 ]
Shi Chunqi [1 ]
Lai Zongsheng [1 ]
机构：
[1] East China Normal Univ, Inst Microelectron Circuit & Syst, Shanghai 200062, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 05期
关键词：
SiGe; BiCMOS; power amplifier; monolithic; multi-mode;
D O I：
10.1088/1674-4926/32/5/055005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A fully monolithic power amplifier (PA) for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 mu m SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Design of a 240-GHz LNA in 0.13 μm SiGe BiCMOS Technology
    Najmussadat, Md
    Ahamed, Raju
    Varonen, Mikko
    Parveg, Dristy
    Tawfik, Yehia
    Halonen, Kari A., I
    2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 17 - 20
  • [32] A SiGe BiCMOS High Voltage Driver for Class-S Power Amplifier
    Park, Bonghyuk
    Jang, Seunghyun
    Jung, Jaeho
    PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2012, : 41 - 43
  • [33] Design and Analysis of an E-band Power Detector in 0.13 μm SiGe BiCMOS Technology
    Ahamed, Raju
    Varonen, Mikko
    Parveg, Dristy
    Najmussadat, Md
    Kantanen, Mikko
    Halonen, Kari A., I
    2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
  • [34] Integrated DC-DC converter design for improved WCDMA power amplifier efficiency in SiGe BiCMOS technology
    Guckenberger, D
    Kornegay, K
    ISLPED'03: PROCEEDINGS OF THE 2003 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, 2003, : 449 - 454
  • [35] Design tradeoff for SiGe 0.35-μm BiCMOS low-power and high figure-of-merit LNA
    Chen, HK
    Chen, HJ
    Juang, YZ
    Chiu, CF
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 47 (01) : 65 - 68
  • [36] Design of a Ka-Band 0.18-μm BiCMOS UpConverter
    Cuong Huynh
    Cam Nguyen
    2015 INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC), 2015, : 507 - 510
  • [37] A+18dBm, 79-87.5GHz Bandwidth Power Amplifier in 0.13μm SiGe-BiCMOS
    Zhao, Yi
    Long, John R.
    Spirito, Marco
    Akhnoukh, Atef B.
    2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 17 - 20
  • [38] 3-Path 5-6 GHz 0.25 μm SiGe BiCMOS Power Amplifier on Thin Substrate
    Ozbek, Sefa
    Digel, Johannes
    Grozing, Markus
    Berroth, Manfred
    Alavi, Golzar
    Burghartz, Joachim N.
    2017 13TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME), 2017, : 49 - 52
  • [39] A Compact 210-to-250 GHz Quad-Stacked Power Amplifier in 0.13-μm SiGe BiCMOS
    Tian, Xiaoxu
    Zhu, Nengxu
    Liu, Zhiheng
    Meng, Fanyi
    2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
  • [40] 3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications
    Oezbek, Sefa
    Alavi, Golzar
    Digel, Johannes
    Groezing, Markus
    Burghartz, Joachim N.
    Berroth, Manfred
    INTEGRATION-THE VLSI JOURNAL, 2018, 63 : 291 - 298
12345