EFFECT OF IRRADIATION ON THE PARAMETERS OF NEUTRON-TRANSMUTATION-DOPED SILICON

被引：0

作者：

BERMAN, LS ^{[1
]}

VORONOV, IN ^{[1
]}

GREKHOV, IV ^{[1
]}

GRINSHTEIN, PM ^{[1
]}

MOROKHOVETS, MA ^{[1
]}

REMENYUK, AD ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

来源：

INORGANIC MATERIALS | 1982年 / 18卷 / 08期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1052 / 1056

页数：5

共 50 条

[31] ELECTRICAL PROPERTY STUDIES OF OXYGEN IN CZOCHRALSKI-GROWN NEUTRON-TRANSMUTATION-DOPED SILICON
CLELAND, JW
FUKUOKA, N
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 203 - 203
[32] Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
S. H. Park
T. W. Kang
T. W. Kim
Journal of Materials Science, 2004, 39 : 3217 - 3219
[33] Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Park, SH
Kang, TW
Kim, TW
JOURNAL OF MATERIALS SCIENCE, 2004, 39 (09) : 3217 - 3219
[34] ABSORPTION PEAKS AT 2663 AND 2692 CM-1 OBSERVED IN NEUTRON-TRANSMUTATION-DOPED SILICON
ZHONG, L
WANG, ZG
WAN, S
LIN, LY
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4275 - 4278
[35] INFRARED-ABSORPTION STUDY OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM
PARK, IS
HALLER, EE
JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6775 - 6779
[36] THERMAL RECOVERY OF THE LATTICE DAMAGE IN NEUTRON-TRANSMUTATION-DOPED INSE
PAREJA, R
DELACRUZ, RM
MARI, B
SEGURA, A
MUNOZ, V
PHYSICAL REVIEW B, 1993, 47 (05): : 2870 - 2873
[37] PHOTOLUMINESCENCE BANDS OF DEEP CENTERS IN NEUTRON-TRANSMUTATION-DOPED GAAS
MANASREH, MO
MUDARE, SM
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (06) : 435 - 438
[38] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON
SEAGER, CH
CASTNER, TG
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889
[39] Reduced pore diameter fluctuations of macroporous silicon fabricated from neutron-transmutation-doped material
Schweizer, Stefan L.
von Rhein, Andreas
Geppert, Torsten M.
Wehrspohn, Ralf B.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (07): : 148 - 150
[40] INFLUENCE OF PHOTOEXCITATION ON HOPPING CONDUCTION IN NEUTRON-TRANSMUTATION-DOPED GAAS
SATOH, M
KAWAHARA, H
KURIYAMA, K
KAWAKUBO, T
YONEDA, K
KIMURA, I
JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1099 - 1103

← 1 2 3 4 5 →