EFFECT OF IRRADIATION ON THE PARAMETERS OF NEUTRON-TRANSMUTATION-DOPED SILICON

被引：0
|
作者：
BERMAN, LS [1 ]
VORONOV, IN [1 ]
GREKHOV, IV [1 ]
GRINSHTEIN, PM [1 ]
MOROKHOVETS, MA [1 ]
REMENYUK, AD [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源：
INORGANIC MATERIALS | 1982年 / 18卷 / 08期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1052 / 1056
页数：5
相关论文
共 50 条
  • [1] NEUTRON-TRANSMUTATION-DOPED SILICON - GULDBERG,J
    HERZER, H
    NUCLEAR TECHNOLOGY, 1983, 62 (01) : 122 - 124
  • [2] ULTRASHALLOW ACCEPTORS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    UDO, MK
    LABREC, CR
    RAMDAS, AK
    PHYSICAL REVIEW B, 1991, 44 (04): : 1565 - 1578
  • [3] NATURE AND PARAMETERS OF IMPURITY DEFECT CLUSTERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    LUGAKOV, PF
    LUKYANITSA, VV
    POKOTILO, YM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (11): : 1239 - 1241
  • [4] Athermal annealing of neutron-transmutation-doped silicon
    Grun, J
    Manka, CK
    Hoffman, CA
    Meyer, JR
    Glembocki, J
    Qadri, SB
    Skelton, EF
    Donnelly, D
    Covington, B
    SHOCK COMPRESSION OF CONDENSED MATTER - 1997, 1998, 429 : 981 - 984
  • [5] FORMATION OF RADIATION DEFECTS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    YUNUSOV, MS
    KARIMOV, M
    OKSENGENDLER, BL
    KHAKIMOV, M
    SEMICONDUCTORS, 1993, 27 (07) : 622 - 624
  • [6] THE EFFECT OF RADIATION-DAMAGE ON CARRIER MOBILITY IN NEUTRON-TRANSMUTATION-DOPED SILICON
    MAEKAWA, T
    INOUE, S
    AIURA, M
    USAMI, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (02) : 77 - 83
  • [7] EPR STUDY OF ANNEALING BEHAVIOR OF NEUTRON-TRANSMUTATION-DOPED SILICON
    STETTER, G
    COUFAL, H
    LUSCHER, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : K17 - K20
  • [8] ANNEALING BEHAVIOR OF EXCESS CARRIERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    MAEKAWA, T
    NOGAMI, S
    INOUE, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 459 - 467
  • [9] CHARACTERISTICS OF ANNEALING OF RECOMBINATION CENTERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    KOLKOVSKII, II
    SHUSHA, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1195 - 1197
  • [10] EFFECT OF ANNEALING AND HYDROGENATION ON NEUTRON-TRANSMUTATION-DOPED GAAS
    CHO, HD
    SHON, Y
    KANG, TW
    KIM, HJ
    SHIM, HS
    KIM, TW
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 146 (02): : 603 - 611
12345