NEW ANALYSIS OF FIELD-EFFECT CONDUCTANCE IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引:6
作者
LEE, S
CHEN, I
机构
关键词
D O I
10.1063/1.93594
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:558 / 560
页数:3
相关论文
共 18 条
[1]  
AST D, COMMUNICATION
[2]  
CARNAHAN B, 1969, APPLIED NUMERICAL ME, pCH7
[3]   IV CHARACTERISTICS OF THIN-FILM TRANSISTORS [J].
CHEN, I ;
LUO, FC .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :3020-3026
[4]   ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES [J].
CHEN, I ;
LEE, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1045-1051
[5]   ELECTRONIC CHARACTERIZATION OF DOUBLE-GATE THIN-FILM TRANSISTORS [J].
CHEN, I ;
LUO, FC .
SOLID-STATE ELECTRONICS, 1981, 24 (03) :257-261
[6]   ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].
GOODMAN, NB ;
FRITZSCHE, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165
[7]   AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
HAYAMA, H ;
MATSUMURA, M .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :754-755
[8]  
LECOMBER PG, 1979, J NON-CRYST SOLIDS, V32, P1, DOI 10.1016/0022-3093(79)90061-9
[9]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[10]   INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].
MADAN, A ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257