SOME NEW RESULTS ON SEMIINSULATING GAAS DETECTORS FOR LOW-ENERGY X-RAYS

被引：15
|
作者：
BENCIVELLI, W
BERTOLUCCI, E
BOTTIGLI, U
COLA, A
DAURIA, S
FANTACCI, ME
OSHEA, V
RAINE, C
ROSSO, V
SMITH, K
STEFANINI, A
VASANELLI, L
机构：
[1] UNIV PISA,DIPARTIMENTO FIS,PISA,ITALY
[2] UNIV PISA,IST PATOL MED,PISA,ITALY
[3] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY
[4] INFM,SEZ GNSM,LECCE,ITALY
[5] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW,LANARK,SCOTLAND
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 355卷 / 2-3期
关键词：
D O I：
10.1016/0168-9002(94)01128-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GaAs is a semiconductor suitable for room temperature X-ray detection but hitherto has suffered from incomplete charge collection and is affected by noise. Recent GaAs detectors made with LEC material have shown improved charge collection efficiency and energy resolution. In this paper we describe the fabrication process and present the results obtained with 80 mu m thick pad detectors.
引用
收藏
页码：425 / 427
页数：3
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