LONG-TERM REVERSE ANNEALING IN SILICON DETECTORS

被引：18

作者：

SCHULZ, T

FEICK, H

FRETWURST, E

LINDSTROM, G

MOLL, M

MAHLMANN, KH

机构：

[1] I. Institut für Experimentalphysik, Universität Hamburg, Hamburg

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 04期

关键词：

D O I：

10.1109/23.322808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The methods of isothermal and isochronal heat treatments have been used for further studies of the reverse annealing effect of the effective impurity concentration. These measurements lead to an improved reliability of a second order model, which was already proposed in earlier works. Using only three parameters this model can predict the time dependence of the effective impurity concentration in a wide range of neutron fluences and temperature.

引用

页码：791 / 795

页数：5

共 7 条

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