RAMAN MICROPROBE DETERMINATION OF LOCAL CRYSTAL ORIENTATION

This paper details the experimental apparatus and the method for extracting local crystal orientation information for the particular case of Si. Experiments on single crystals of known orientation are presented which confirm our theoretical predictions and serve to calibrate the technique. Practical examples of mapping of laser annealed silicon-on-oxide structures are given. The analysis shows the loss of the lateral epitaxial seed, with many grains exhibiting LT AN BR 110 RT AN BR surface normals, in agreement with qualitative results obtained from a destructive selective chemical-etching procedure. Signal intensities are such that orientation information at a single point can be recorded in less than 30 s, thus providing the potential for a real time in situ monitor of slow growth processes.