INVESTIGATIONS OF PROCESS OF FORMATION OF A BARRIER JUNCTION IN SURFACE-BARRIER DETECTORS WITH P-TYPE SILICON BASE

被引：0

作者：

LEFTEROV, DP ^{[1
]}

MARINOV, MG ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI, INST NUCL RES & NUCL POWER, 1113 SOFIA, BULGARIA

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：738 / 740

页数：3

共 10 条

[1]

AKIMOV YK, 1967, SEMICONDUCTOR DETECT

[2]

BLANKENSHIP JL, 1961, IRE T, VNS8, P17

[3] THE SEMICONDUCTOR SURFACE BARRIER FOR NUCLEAR PARTICLE DETECTION [J].

DEARNALEY, G ;

WHITEHEAD, AB .

NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02) :205-226

[4]

GIBBONS PE, 1964, NUCL ELECTRON, P243

[5]

GUMNEROVA L, 1973, SILICON SURFACE BARR

[6]

KUSHNIRUK VF, 1963, ATOM ENERG, V15, P324

[7]

MARINOV MG, 1974, DOKL BOLG AKAD NAUK, V27, P901

[8]

RYVKIN SM, 1963, SEMICONDUCTOR COUNTE

[9] RECTIFYING PROCESS IN SURFACE BARRIER DETECTORS [J].

SIFFERT, P ;

COCHE, A .

[10] NEW RESULTS ON RECTIFYING PROCESS IN SURFACE BARRIER COUNTERS [J].

SIFFERT, P ;

COCHE, A .