LASER-HEATING AND MELTING OF THIN-FILMS ON LOW-CONDUCTIVITY SUBSTRATES

被引：60

作者：

GHEZ, RA ^{[1
]}

LAFF, RA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2103 / 2110

页数：8

共 28 条

[1] EFFECTS OF PULSED LASER RADIATION ON THIN ALUMINUM FILMS [J].

ABOELFOTOH, MO ;

VONGUTFE.RJ .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3789-+

[2]

Born M., 1959, PRINCIPLES OPTICS

[3]

Carslaw H.S., 1959, CONDUCTION HEAT SOLI

[4]

CHARSCHAN SS, 1972, LASERS IND, pCH4

[5] ELECTRON-BEAM HEATING IN AMORPHOUS SEMICONDUCTOR BEAM MEMORY [J].

CHEN, ACM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) :160-169

[6] HIGH-INTENSITY LASER-INDUCED VAPORIZATION AND EXPLOSION OF SOLID MATERIAL [J].

DABBY, FW ;

PAEK, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (02) :106-&

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[8] SILICON DIODES MADE BY LASER IRRADIATION [J].

FAIRFIELD, JM ;

SCHWUTTKE, GH .

SOLID-STATE ELECTRONICS, 1968, 11 (12) :1175-+

[9] RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS [J].

FEINLEIB, J ;

DENEUFVILLE, J ;

MOSS, SC ;

OVSHINSKY, SR .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :254-+

[10] TABLE OF INTEGRALS OF ERROR FUNCTION .2. ADDITIONS AND CORRECTIONS [J].

GELLER, M ;

NG, EW .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION B-MATHEMATICAL SCIENCES, 1971, B 75 (3-4) :149-+

← 1 2 3 →