DRAWBACKS TO USING NIST ELECTROMIGRATION TEST-STRUCTURES TO TEST BAMBOO METAL LINES

被引：10

作者：

DEMUNARI, I ^{[1
]}

SCORZONI, A ^{[1
]}

TAMARRI, F ^{[1
]}

GOVONI, D ^{[1
]}

CORTICELLI, F ^{[1
]}

FANTINI, F ^{[1
]}

机构：

[1] LAMEL INST,CNR,I-40126 BOLOGNA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 12期

关键词：

D O I：

10.1109/16.337439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the applicability of NIST electromigration test patterns when used to test ''bamboo'' metal lines is discussed, Wafer level tests on passivated and nonpassivated samples employing the Al-1%Si/TiN/Ti metallization scheme were performed, Straight metal lines 1000 mu m long and 0.9 mu m or 1,4 mu m wide were tested at two different current densities, j = 3 MA/cm(2) and j = 4.5 MA/cm(2), keeping the stress temperature at T 230 degrees C, The failures occurred mainly in the end segment areas and hindered the evaluation of the electromigration resistance of the test lines, In order to avoid this problems, completely different test patterns containing a number of geometrical variations should be defined.

引用

页码：2276 / 2280

页数：5

共 11 条

[1]

ASTM, 2009, ANN BOOK ASTM STANDA, V97

[2] ELECTROMIGRATION IN THIN-FILMS FOR MICROELECTRONICS [J].