ELECTRON HEATING IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS

被引：29
|
作者：
DIMARIA, DJ [1 ]
ABERNATHEY, JR [1 ]
机构：
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期
关键词：
D O I：
10.1063/1.337265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1727 / 1729
页数：3
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